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Si5475BDC
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 12
R DS(on) ( Ω )
0.028 at V GS = - 4.5 V
0.039 at V GS = - 2.5V
I D (A) a
-6
-6
Q g (Typ.)
15.5 nC
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET: 1.8 V Rated
0.054 at V GS = - 1.8 V
-6
1206-8 ChipFET
S
1
D
D
D
D
D
Marking Code
G
D
S
G
B N
XXX
Lot Tracea b ility
and Date Code
D
Part # Code
P-Channel MOSFET
Bottom V ie w
Orderin g Information: Si5475BDC-T1-E3 (Lead (P b )-free)
Si5475BDC-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 12
±8
- 6 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
- 6 a
- 7.7 b,c
- 6.2 b,c
- 20
- 5.2
- 1.3 b,c
6.3
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
4
2.5 b,c
W
T A = 70 °C
1.6 b,c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
R thJA
R thJF
40
15
50
20
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile ( www.vishay.com/ppg?73257 ). The 1206 ChipFET is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 95 °C/W.
Document Number: 73381
S-83054-Rev. D, 29-Dec-08
www.vishay.com
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